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参数资料
| 型号： | SPP20N60CFD |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 1/14页 |
| 文件大小： | 163K |
| 代理商： | SPP20N60CFD |
2002-08-12
Page 1
SPP20N60C2, SPB20N60C2
SPA20N60C2
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Product Summary
V
DS
@
T
jmax
650
0.19
20
V
A
R
DS(on)
I
D
P-TO220-3-31
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31
1
2
3
Marking
20N60C2
20N60C2
20N60C2
Type
SPP20N60C2
SPB20N60C2
SPA20N60C2
Package
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31 Q67040-S4333
Ordering Code
Q67040-S4320
Q67040-S4322
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
20
1)
13
1)
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
20
13
A
I
D puls
E
AS
40
690
40
690
A
mJ
I
D
=10A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax2)
I
D
=20A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
E
AR
1
1
I
AR
d
v
/d
t
20
6
20
6
A
V/ns
I
S
= 20 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
μ
s,
T
jmax
=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
208
±20
±
30
34.5
V
W
SPP_B
-55...+150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP20N60CFD_05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP20N60CFD_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP20N60CFDHKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube |
| SPP20N60CFDXK | 制造商:Infineon Technologies 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB |
| SPP20N60CFDXKSA1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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