参数资料
型号: SQ4410EY-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N-CH D-S 30V 8SOIC
标准包装: 2,500
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 12 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 53nC @ 10V
输入电容 (Ciss) @ Vds: 2385pF @ 25V
功率 - 最大: 5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
SQ4410EY
www.vishay.com
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = 10 V
R DS(on) ( ? ) at V GS = 4.5 V
I D (A)
Configuration
30
0.012
0.020
15
Single
FEATURES
? TrenchFET ? Power MOSFET
? AEC-Q101 Qualified
? 100 % R g and UIS Tested
? Material categorization: ?
For definitions of compliance please see
www.vishay.com/doc?99912
D
SO-8
S
1
8
D
S
S
G
2
3
4
7
6
5
D
D
D
G
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4410EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
30
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C
T C = 125 °C
I D
15
9
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
I S
I DM
4.5
60
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I AS
E AS
P D
T J , T stg
38
72
5
1.6
- 55 to + 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount b
R thJA
R thJF
90
30
°C/W
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. When mounted on 1" square PCB (FR-4 material).
S12-2200-Rev. D, 24-Sep-12
1
Document Number: 65674
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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