参数资料
型号: SQ7415EN-T1-E3
厂商: Vishay Siliconix
文件页数: 1/12页
文件大小: 0K
描述: MOSFET P-CH 60V 3.6A PPAK 1212-8
标准包装: 3,000
系列: TrenchFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 3.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 65 毫欧 @ 5.7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 25nC @ 10V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8
供应商设备封装: PowerPAK? 1212-8
包装: 带卷 (TR)
SQ7415EN
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = - 10 V
R DS(on) ( ? ) at V GS = - 4.5 V
I D (A)
Configuration
PowerPAK 1212-8
- 60
0.065
0.110
- 5.7
Single
S
FEATURES
? TrenchFET ? Power MOSFET
? PowerPAK ? Package
- Low Thermal Resistance, R thJC
- Low 1.07 mm Profile
? Fast Switching
? AEC-Q101 Qualified
? 100 % R g Tested
? Material categorization: For definitions of compliance
3.3 mm
1
S
2
S
S
3.3 mm
G
please see www.vishay.com/doc?99912
D
3
4
G
8
D
7
6
D
D
D
5
Part Marking Code: Q002
Bottom View
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
PowerPAK 1212-8
SQ7415EN-T1-E3
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
10 s
- 60
± 20
STEADY STATE
- 60
± 20
UNIT
V
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
I D
I S
I DM
P D
T J , T stg
- 5.7
- 4.6
- 3.2
- 30
3.8
2
- 55 to + 175
260
- 3.6
- 2.9
- 1.3
- 30
1.5
0.8
- 55 to + 175
260
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
R thJA
R thJC
26
65
1.9
33
81
2.4
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-1462 Rev. E, 01-Jul-13
1
Document Number: 74488
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
PDF描述
SQD15N06-42L-GE3 MOSFET N-CH 60V 15A TO252
SQD19P06-60L-GE3 MOSFET P-CH D-S 60V TO252
SQD23N06-31L-GE3 MOSFET N-CH D-S 60V TO252
SQD35N05-26L-GE3 MOSFET N-CH D-S 55V 30A TO252
SQD40N04-10A-GE3 MOSFET N-CH D-S 40V 42A TO252
相关代理商/技术参数
参数描述
SQ742 制造商:POLYFET 制造商全称:Polyfet RF Devices 功能描述:SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SQ77-05 制造商:Distributed By MCM 功能描述:Square Belt
SQ-8 制造商:Mac8 功能描述:
SQ8063P12NF 制造商:Laird Technologies Inc 功能描述:OMNI,SQUINT,12IN,NF,806-866MHZ,3DBI
SQ82183P12NF 功能描述:ANTENNA MULTIBAND 3.5DBI N FML RoHS:是 类别:RF/IF 和 RFID >> RF 天线 系列:* 标准包装:1 系列:*