参数资料
型号: SR103
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41
文件页数: 1/2页
文件大小: 27K
代理商: SR103
DS23002 Rev. C-3
1 of 2
SR102-SR106
High Current Capability and Low Forward Drop
High Surge Capacity
Guard Ring for Transient Protection
Low Power Loss, High Efficiency
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: DO-41, Molded Plastic
Terminals: Axial lead, Solderable per
MIL-STD-202, Method 208
Mounting Position: Any
Polarity: Cathode band
Weight: 0.35 grams (approx.)
Notes:
1. Thermal Resistance from Junction to Ambient with Vertical PC Board Mounting, 1.27mm Lead Length.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V.
A
B
C
D
Features
SR102 - SR106
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
Characteristic
Symbol
SR102
SR103
SR104
SR105
SR106
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
V
Maximum RMS Voltage
VRSM
14
21
28
35
42
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
V
Maximum Average Forward Rectified
Current @ Lead Temperature (TL)
@ TL =75
°C
measured 9.5mm lead length
@ TL = 100
°C
I(AV)
1.0
1.0
A
Peak Forward Surge Current 8.3ms half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
25
A
Maximum Forward Voltage
@ 1.0A
VF
0.55
0.60
0.70
V
Maximum Average Reverse Current at
@ TA =25
°C
Peak Reverse Voltage
@ TA = 100
°C
IR
1.0
10
mA
Typical Thermal Resistance (Note 1)
RθJL
15
K/W
Typical Junction Capacitance (Note 2)
CJ
110
80
pF
Storage and Operating Temperature Range
TJ,TSTG
-65 to +150
°C
DO-41
Dim
Min
Max
A
25.4
B
4.1
5.2
C
0.71
0.86
D
2.0
2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
POWER SEMICONDUCTOR
相关PDF资料
PDF描述
SR102 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
SR1045-TP 10 A, 45 V, SILICON, RECTIFIER DIODE
SR12.TG 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SR1503 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
SR1507 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
相关代理商/技术参数
参数描述
SR-103 制造商:Thomas & Betts 功能描述:
SR103 R0 制造商:SKMI/Taiwan 功能描述:Diode Schottky 30V 1A 2-Pin DO-41 T/R 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 30V 1A 2-Pin DO-41 T/R
SR1030 功能描述:肖特基二极管与整流器 10 Amp 30 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SR1030 C0 制造商:SKMI/Taiwan 功能描述:Diode Schottky 30V 10A 3-Pin(3+Tab) TO-220AB Tube 制造商:SKMI/Taiwan 功能描述:Diode Schottky 30V 10A 3-Pin(3+Tab) TO-220 Tube
SR1030C 制造商:CHENDA 制造商全称:Chendahang Electronics Co., Ltd 功能描述:SCHOTTKY BARRIER RECTIFIER