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| 型号： | SR3.3.TCT |
| 厂商： | Semtech |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY 2-LINE 3.3V SOT-143 |
| 标准包装： | 1 |
| 系列： | RailClamp® |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 3.5V |
| 功率（瓦特）： | 300W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-253-4，TO-253AA |
| 供应商设备封装： | SOT-143 |
| 包装： | 标准包装 |
| 产品目录页面： | 1357 (CN2011-ZH PDF) |
| 其它名称： | SR3.3DKR |
SR3.3
PROTECTION PRODUCTS
Applications Information
Device Connection Options for Protection of
T w o High-Speed Data Lines
The SR3.3 TVS is designed to protect two data lines
from transient over-voltages by clamping them to a
fixed reference. When the voltage on the protected
line exceeds the reference voltage (plus diode V F ) the
steering diodes are forward biased, conducting the
transient current away from the sensitive circuitry.
Data lines are connected at pins 2 and 3. The nega-
tive reference (REF1) is connected at pin 1. This pin
should be connected directly to a ground plane on the
board for best results. The path length is kept as short
as possible to minimize parasitic inductance.
The positive reference (REF2) is connected at pin 4.
The options for connecting the positive reference are
as follows:
Note that pins 4 is connected internally to the cathode
of the low voltage TVS. It is not recommended that this
Data Line Pro t ection Using Internal T V S Diode
as Reference
I PP
pin be directly connected to a DC source greater than
the snap-back votlage (V SB ) as the device can latch on
as described below.
I SB
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. By utilizing the EPD tech-
nology, the SR3.3 can effectively operate at 3.3V while
V BRR
I PT
I R
V RWM
V SB V PT V C
maintaining excellent electrical characteristics.
I BRR
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (V RWM ). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(V PT ) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance
Figure 1 - EPD TVS IV Characteristic Curve
characteristics due to its structure. This point is
defined on the curve by the snap-back voltage (V SB )
and snap-back current (I SB ). To return to a non-
conducting state, the current through the device must
fall below the I SB (approximately <50mA) and the
voltage must fall below the V SB (normally 2.8 volts for a
3.3V device). If a 3.3V TVS is connected to 3.3V DC
source, it will never fall below the snap-back voltage of
2.8V and will therefore stay in a conducting state.
? 2008 Semtech Corp.
4
www.semtech.com
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