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参数资料
| 型号： | SR35ET/R13 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 105K |
| 代理商： | SR35ET/R13 |
PAGE . 2
STAD-MAR.17.2009
1
SR32E ~ SR36E
RATING AND CHARACTERISTIC CURVES
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.4- MAXIMUM NON - REPETITIVE SURGE CURRENT
Fig.3- TYPICAL REVERSE CHARACTERISTIC
INST
ANT
ANEOUS
REVERSE
CURRENT
,m
A
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
AMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PEAK
FOR
W
ARD
SURGE
CURRENT
,
NO. OF CYCLE AT 60Hz
160
140
120
100
80
60
40
20
0
1
2
5
10
20
50
100
8.3ms Single
Half Since-Wave
JEDEC Method
.4
.5
.6
.7
.8
.9 1.0 1.1
50
0.1
10
1.0
.3
.2
T= 25 C
Pulse Width = 300 s
1% Duty Cycle
J
O
m
50-60V
20-40V
20
40
60
80 100 120 140
10
1.0
0.10
0.01
.001
T= 25 C
J
O
T= 75 C
J
O
T= 100 C
J
O
V
=20-40V
V
=50-60V
RRM
Fig.1- FORWARD CURRENT DERATING CURVE
5.0
4.0
2.0
0
RESISTIVEORINDUCTIVE LOAD
1.0
3.0
0
20
40
60
80
100
120
140
160
LEAD TEMPERATURE, C
O
=20-30V
=40-60V
A
VERAGE
F
OR
W
A
RD
RECTIFIED
CURRENT
AMPERES
相关PDF资料 |
PDF描述 |
|---|---|
| SR36ET/R13 | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SR36 | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SX33LT/R7 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SDA113AL | 3 PHASE, 7.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |
| SDA113BLUB | 3 PHASE, 7.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
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| SR35L000FE66 | 功能描述:RES 0.005 OHM 1% 3W RADIAL 制造商:vishay dale 系列:SR 包装:散装 零件状态:在售 电阻值:5 mOhms 容差:±1% 功率（W）:3W 成分:绕线 特性:电流检测 温度系数:±400ppm/°C 工作温度:-65°C ~ 275°C 封装/外壳:径向 供应商器件封装:径向引线 大小/尺寸:0.065" 直径 x 0.600" 长（1.65mm x 15.24mm） 高度 - 安装（最大值）:1.000"（25.40mm） 端子数:2 故障率:- 标准包装:500 |
| S-R35PF | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Silicon Power Rectifier |
| SR35SS | 制造商:Southco 功能描述: |
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