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参数资料
| 型号： | SRDA3.3-4DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY 4-LINE 3.3V SO-8 |
| 标准包装： | 2,500 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 5V |
| 功率（瓦特）： | 500W |
| 电极标记： | 4 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
SRDA3.3 ? 4
ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Stand ? Off Voltage
Reverse Breakdown Voltage @ I t = 1.0 mA
Reverse Leakage Current @ V RWN = 3.3 V
Maximum Clamping Voltage @ I PP = 1.0 A, 8 x 20 m S
Maximum Clamping Voltage @ I PP = 10 A, 8 x 20 m S
Maximum Clamping Voltage @ I PP = 25 A, 8 x 20 m S
Between I/O Pins and Ground @ V R = 0 V, 1.0 MHz
Between I/O Pins @ V R = 0 Volts, 1.0 MHz
Symbol
V RWM
V BR
I R
V C
V C
V C
C J
C J
Min
?
5.0
N/A
N/A
N/A
N/A
?
?
Typ
?
?
2.8
5.9
7.1
9.0
8.0
4.0
Max
3.3
?
5.0
7.0
10
15
15
?
Unit
V
V
m A
V
V
V
pF
pF
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
P pk
C
Forward Current
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
t r
t P
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
14
12
10
8
6
4
2
0
0
20
40
60
80
0
0
5
10
15
20
25
t, TIME ( m s)
Figure 1. 8 x 20 m s Pulse Waveform
PEAK PULSE CURRENT (A)
Figure 2. Clamping Voltage vs. Peak Pulse Current
(8 x 20 m s Waveform)
http://onsemi.com
2
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