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参数资料
| 型号： | SRF1136 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN RF POWER TRANSISTOR |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 31K |
| 代理商： | SRF1136 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 10 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
36
V
BV
CEO
I
C
= 20 mA
16
V
BV
EBO
I
E
= 1 mA
3.0
V
h
FE
V
CE
= 10 V I
C
= 600 mA
25
100
---
C
OB
V
CB
= 12.5 V f = 1.0 MHz
5
pF
*P
G
dB
*
h
c
%
* RF SPECIFICATIONS ARE CONTROLLED BY CUSTOMER DRAWING AND ARE PROPRIETARY.
NPN RF POWER TRANSISTOR
SRF 1136
DESCRIPTION:
The
ASI
SRF 1136
is a Common
Emitter Device Designed for class C
Amplifier Applications up to 1 GHz.
FEATURES INCLUDE:
·
High Gain
·
Gold Metallization
·
Emitter Ballasting
MAXIMUM RATINGS
I
C
800 mA
V
CBO
36 V
P
DISS
19 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +150
O
C
7.5
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE 280 4L STUDLESS
1 = Collector 3 = Base
2 & 4 = Emitter
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