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参数资料
| 型号： | SRM1HFV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-1 |
| 文件页数： | 1/2页 |
| 文件大小： | 58K |
| 代理商： | SRM1HFV |
PRELIMINARY
Designer's Data Sheet
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
FEATURES:
MINISTUD C, V
Maximum Ratings
oC
-65 TO +175
Top & Tstg
375
Amps
20
Amps
Io
IFSM
SYMBOL
UNITS
VALUE
R2JC
3.5
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25
oC)
Operating and Storage Temperature
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TC = 100
oC
oC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0181A
SRM1HFC, V
thru
SRM2HFC, V
20 AMP
100 - 200 VOLTS
40 nsec
HYPER FAST
RECTIFIER
Replaces DO-4 and DO-5 (1N5816, 1N6306)
High Current Version of 1N5811
Hyper Fast Recovery
PIV to 200 Volts
Low Reverse Leakage
Hermetically Sealed Void-Free Construction 1/
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Equivalent to 1N6686 - 1N6687
For Reverse Polarity add '-R' to Part Number
Consult Factory for Other Package Styles
TX, TXV and Space Level Screening Available
Peak Repetitive Reverse and
DC Blocking Voltage
SRM1HFC, V
SRM2HFC, V
100
200
Volts
VRRM
VRWM
VR
Maximum Thermal Resistance
Junction to Case
1/ PIND Testing not required on Void-Free Devices per MIL-PRF-19500
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