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参数资料
| 型号： | SS100W |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 91K |
| 代理商： | SS100W |
PAGE . 1
STAD-NOV.01.2004
DATA SHEET
SS12W~S100W
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
For surface mounted applications
Low profile package
Built-in strain relief
Metal to silicon rectifier. majority carrier conduction
Low power loss,high efficiency
High surge capacity
High current capacity ,low V
F
For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 99% Sn above
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals:Solder plated, solderable per MIL-STD-202G,
Method 208
Polarity: Color band denotes positive end (cathode)
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
SMA/DO-214AC
Unit: inch (mm)
.181(4.60)
.208(5.28)
.060(1.52)
.096(2.44)
.062(1.60)
.1
14(2.90)
.008(.203)
.012(.305)
.157(4.00)
.188(4.80)
.030(0.76)
.078(2.00)
.0
47
(1.
20)
.098(2.50)
.002(.051)
.006(.152)
VOLTAGE
20 to 100 Volts
CURRENT
1.0 Ampere
PARAMETER
SYMBOL SS12W
SS13W
SS14W
SS15W
SS16W
SS18W
S100W UNITS
Maximum Recurrent Peak Reverse Voltage
V RRM
20
30
40
50
60
80
100
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
56
70
V
Maximum DC Blocking Voltage
V DC
20
30
40
50
60
80
100
V
Maximum Average Forward Current .375"
(9.5mm) lead length at Tc =75J
IAV
1.0
A
Peak Forward Surge Current :8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
30
A
Maximum Forward Voltage at 1.0A (Note 1)
V F
0.50
0.70
0.85
V
Maximum DC Reverse Current TA=25J
at Rated DC Blocking Voltage TA=100J
IR
0.5
50
0.5
20
mA
Typical Thermal Resistance (Note 2)
R QJL
R QJA
28
88
J/ W
Operating Junction and Storage Temperature
Range
T J,T STG
- 50 to + 125
J
Notes :
1. Pulse test with PW×300usec, 1% Duty Cycle.
2. Mounted on P.C. Board with 5.0mm
2 ( .013mm thick) copper pad areas.
相关PDF资料 |
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| SS13-E3/5AT | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AC |
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| SS15-E3/61T | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS15-HE3/5AT | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS15-HE3/61T | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
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