参数资料
型号: SS10P4HE3/86A
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A
封装: GREEN, PLASTIC, SMPC, 3 PIN
文件页数: 1/5页
文件大小: 105K
代理商: SS10P4HE3/86A
New Product
SS10P3 & SS10P4
Vishay General Semiconductor
Document Number: 88983
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Guardring for overvoltage protection
Low forward voltage drop, low power
losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
high reliability/automotive grade (AEC-Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test, HE3 and HM3 suffix meets JESD 201 class 2
whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
30 V, 40 V
IFSM
280 A
EAS
20 mJ
VF at IF = 10 A
0.41 V
TJ max.
150 °C
K
2
1
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS10P3
SS10P4
UNIT
Device marking code
S103
S104
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
10
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
280
A
Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料
PDF描述
SPD0901SMSS 1 A, 90 V, SILICON, SIGNAL DIODE
SPD1002S 2 A, 100 V, SILICON, RECTIFIER DIODE
SS10P3C-G3/86A 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
SDR1-12SMSTXV 1 A, 1200 V, SILICON, SIGNAL DIODE
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相关代理商/技术参数
参数描述
SS10P4HM3/86A 功能描述:肖特基二极管与整流器 10 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS10P4HM3/87A 功能描述:肖特基二极管与整流器 10 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS10P4HM3-86A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4HM3-87A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4-M3/86A 功能描述:肖特基二极管与整流器 10 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel