参数资料
型号: SS10PH10-M3/87A
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 88K
描述: DIODE SCHOTTKY 10A 100V SMPC
标准包装: 6,500
系列: eSMP™
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 10A
电压 - 在 If 时为正向 (Vf)(最大): 880mV @ 10A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 10µA @ 100V
安装类型: 表面贴装
封装/外壳: TO-277,3-PowerDFN
供应商设备封装: TO-277A
包装: 带卷 (TR)
‘lllvVISHAYDV www.viShay.com
SS1 OPH9, SS1 OPH1 0
Vishay General Semiconductor
RATINGS AND cHARAcTERIsTIcs cunvEs (TA = 25 0C unless othemise specified)
6
3
TL measured
at the Cathode
Average Fonuard Rectitied Current (A)
a:
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 — Maximum Forward Current Derating Curve
W)
Average Power Loss (
0 1 2 3 4 5 6 7 3 9 w H
Average Fonlvard Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
:3
v." j-”‘—AlIIIIIw’lv9nII'nI
0.1
Instantaneous Fonuard Current (A)
0.1 02 03 0.4 0.5 0.6 0.7 0.3 0.9 In
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 06-Nov-13
10
.0
0.01
0.001
0 0001
Instantaneous Reverse Current (mA)
0.00001
Percent of Rated Peak Reverse Voltage (%)
Fig. A - Typical Reverse Characteristics Per Diode
Junction Capacitance (pF)
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
3
t— Pulse Duratton (S)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document N umber: 89000
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