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参数资料
| 型号： | SS10PH9-M3/86A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 92K |
| 代理商： | SS10PH9-M3/86A |
Document Number: 89000
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
High Voltage Schottky Rectifiers
SS10PH9, SS10PH10
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode
power supplies, freewheeling diodes, DC/DC converters or
polarity protection application.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Guardring for overvoltage protection
High barrier technology, TJ = 175 °C maximum
Low leakage current
Meets MSL level 1, per J-STD-020
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
200 A
EAS
20 mJ
VF at IF = 10 A
0.661 V
IR
0.3 μA
TJ max.
175 °C
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMP Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS10PH9
SS10PH10
UNIT
Device marking code
10H9
10H10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
10
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
20
A
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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