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参数资料
| 型号： | SS12P4CHM3/86A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 93K |
| 代理商： | SS12P4CHM3/86A |
Document Number: 89141
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 13-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P4C
Vishay General Semiconductor
New Product
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient IThermal mpedance Per Diode
D = 0.5
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
0
1
2
3
4
5
6
7
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D = t
p/T
t
p
T
D = 1.0
D = 0.8
D = 0.1
D = 0.2 D = 0.3
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
T
A = 25 °C
T
A = 125 °C
T
A = 100 °C
0.01
1
10
100
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
0.1
T
A = 125 °C
T
A = 100 °C
T
A = 25 °C
100
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
10
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
100
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
10
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
相关PDF资料 |
PDF描述 |
|---|---|
| SS12P4CHM3/87A | 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS12P4C-M3/87A | 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS12P4S-M3/86A | 4.4 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS12W | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS18W | 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS12P4CHM3-87A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifier |
| SS12P4C-M3/86A | 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS12P4C-M3/87A | 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS12P4C-M3-86A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifier |
| SS12P4C-M3-87A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifier |
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