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| 型号： | SS12P4S-M3/87A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 4.4 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 86K |
| 代理商： | SS12P4S-M3/87A |
Document Number: 89127
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 17-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
19
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
SS12P4S
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Guardring for overvoltage protection
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Notes
(1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
(2) Free air, mounted on recommended copper pad area
(3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV)
12 A
VRRM
40 V
IFSM
280 A
EAS
20 mJ
VF at IF = 12 A
0.43 V
TJ max.
150 °C
K
2
1
TO-277A (SMPC)
eSMP
Series
Anode 1
Anode 2
Cathode
K
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12P4S
UNIT
Device marking code
124S
Maximum repetitive peak reverse voltage
VRRM
40
V
Maximum DC forward current (fig. 1)
IF
12 (1)
4.4 (2)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
280
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TOP, TSTG
- 55 to + 150
°C
Junction temperature in DC forward current without reverse bias, t
1 h (3)
TJ
200
°C
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