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参数资料
| 型号： | SS16-E3/5AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 337K |
| 代理商： | SS16-E3/5AT |
SS12 thru SS16
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88746
Revision: 22-Jan-08
68
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V to 60 V
IFSM
40 A
VF
0.50 V, 0.75 V
TJ max.
125 °C, 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12
SS13
SS14
SS15
SS16
UNIT
Device marking code
S2
S3
S4
S5
S6
V
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current at TL (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SS16-E3/61T | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS16-HE3/61T | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS13-HE3/5AT | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS14-HE3/61T | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS12-HE3/61T | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS16E-TP | 功能描述:肖特基二极管与整流器 Rectifier 60V 30A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS16F | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| SS16-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifier |
| SS16H | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| SS16HE3/5AT | 功能描述:肖特基二极管与整流器 60 Volt 1.0 Amp 40 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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