- 您现在的位置：买卖IC网 > PDF目录40393 > SS16E 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AC PDF资料下载
参数资料
| 型号： | SS16E |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 192K |
| 代理商： | SS16E |
PAGE . 1
STAD-FEB.15.2005
DATA SHEET
SS12E~SS16E
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
For surface mounted applications
Low profile package
Built-in strain relief
Metal to silicon rectifier. majority carrier conduction
Low power loss,high efficiency
High surge capacity
High current capacity ,low V
F
For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications.
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals:Solder plated, solderable per MIL-STD-202G,
Method 208
Polarity: Color band denotes positive end (cathode)
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
NOTES:
A.Pulse Test with PW =300sec, 1% Duty Cycle.
B.Mounted on P.C. Board with 5.0mm2 (.013mm thick) copper pad areas.
SMA/DO-214AC
Unit: inch (mm)
.181(4.60)
.208(5.28)
.060(1.52)
.096(2.44)
.062(1.60)
.1
14(2.90)
.008(.203)
.012(.305)
.157(4.00)
.188(4.80)
.030(0.76)
.078(2.00)
.0
47
(1.
20)
.098(2.50)
.002(.051)
.006(.152)
VOLTAGE
20 to 60 Volts
CURRENT
1.0 Amperes
PARAMETER
SYMBOL
SS12E
SS13E
SS14E
SS15E
SS16E
UNITS
Maximum Recurrent Peak Reverse
Voltage
V RRM
20
30
40
50
60
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
V
Maximum DC Blocking Voltage
V DC
20
30
40
50
60
V
Maximum Average Forward Rectified
Current .375" (9.5mm) lead length at TL
=75
O
C
I AV
1
A
Peak Forward Surge Current :8.3ms
single half sine-wave superimposed on
rated load(JEDEC method)
I FSM
30
A
Maximum Forward Voltage at 1.0A
V F
0.5
0.7
V
Maximum DC Reverse Current TA=25
O
C
at Rated DC Blocking Voltage TA=100
O
C
I R
0.5
50
mA
Maximunl Thermal Resisance
R ΘJL
R ΘJA
28
88
O
C / W
Operating Junction and Storage
Temperature Range
T J, T STG
-50 to +125
O
C
Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
. ESD Passed devices : Air mode 15KV ,human body mode 8KV
相关PDF资料 |
PDF描述 |
|---|---|
| SS13G-TP | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS15G-TP | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS12G-TP | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS18G-TP | 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS13P | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS16-E3 | 制造商:Vishay Semiconductors 功能描述:Rectifier, Schottky; DO-214AC; 1A IF; 0.75V; 60V; 40A IFRM; 88C/W; 28C/W |
| SS16-E3/11T | 功能描述:肖特基二极管与整流器 60 Volt 1.0 Amp 40 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS16-E3/51T | 功能描述:肖特基二极管与整流器 1.0 Amp 60 Volt 40 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS16-E3/5AT | 功能描述:肖特基二极管与整流器 60 Volt 1.0 Amp 40 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS16-E3/61T | 功能描述:肖特基二极管与整流器 1.0 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。