参数资料
型号: SS16T3G
厂商: ON Semiconductor
文件页数: 3/4页
文件大小: 134K
描述: DIODE SCHOTTKY POWER 1A 60V SMA
产品目录绘图: Rectifier SMA Pkg
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 60V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 720mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 60V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: SMA
包装: 标准包装
产品目录页面: 1567 (CN2011-ZH PDF)
其它名称: SS16T3GOSDKR
SS16T3G, SBRA8160T3G
http://onsemi.com
3
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Forward Power Dissipation
1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
40 7050 60
0.001
0
0.1
0.05
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.0
0
0
4.0
2.0
2.0
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
P
F(AV)
, AVERAGE FORWARD
0.1
0
0.2 0.4 0.8 1.00.6
10 20 30
10
3.0 4.0 5.0
1.6
5.0
3.0
1.0
, REVERSE CURRENT (mA)
R
0.2
0.5
1.0
0.02
0.01
0.005
0.002
TJ
= 150
?C
100?C
25?C
IPK/IAV
= 20
SQUARE
WAVE
dc
10
5
TJ
= 150
?C
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR
is sufficiently below rated
VR.
125?C
5.0
2.0
100?C
75?C
25?C
POWER DISSIPATION (WATTS)
1.2
0.07
0.05
0.03
0.02
0.2
0.3
0.5
0.7
2.0
3.0
5.0
7.0
Figure 4. Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
50 8060 70
20
0
60
40
30
10 20 30 40
50
70
80
100
200
C, CAPACITANCE (pF)
100
90
TJ
= 25
?C
f = 1 MHz
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