- 您现在的位置：买卖IC网 > PDF目录141195 > SS1H9-HE3/5AT (VISHAY SEMICONDUCTORS) 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC PDF资料下载
参数资料
| 型号： | SS1H9-HE3/5AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 91K |
| 代理商： | SS1H9-HE3/5AT |
Document Number 88747
07-Jul-06
www.vishay.com
3
SS1H9 & SS1H10
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Tj = 150 °C
Tj = 125 °C
Tj = 175 °C
Tj = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
100
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.01
0.10
1
10
100
1000
10000
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
Tj = 150 °C
Tj = 125 °C
Tj = 175 °C
Tj = 25 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal
10
100
1000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
1.0
10
100
0.01
0.1
1
10
100
t, Pulse Duration (sec.)
T
ransient
Ther
mal
Impedance
(°C/
W
)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
相关PDF资料 |
PDF描述 |
|---|---|
| ST1.5KPB22A | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| ST1.5KPB62 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| ST1.5KPS62A | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SF25GP | 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 |
| SMBJ440AP | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS1-IC | 功能描述:单板计算机 Spin Stamp RoHS:否 制造商:Ampro By ADLINK 外观尺寸:EPIC 处理器类型:Intel Atom D510 频率:1.66 GHz 存储容量:2 GB (max) 存储类型:DDR2, L2 Cache 接口类型:Ethernet, PS/2, SATA, Serial, USB 工作电源电压:5 V, 12 V 功耗:13 W 最大工作温度:+ 70 C 尺寸:165.1 mm x 114.3 mm |
| SS1J | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SUPER FAST RECTIFIERS |
| SS1K | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE：50 TO 1000V CURRENT： 1.0A |
| SS1L | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALL PLATE, 1-G, SWITCH, 430SS |
| SS1-LXH312GD12V-150 | 制造商:Lumex Inc 功能描述: |
发布紧急采购，3分钟左右您将得到回复。