参数资料
型号: SS1H9-HE3
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC
封装: LEAD FREE, PLASTIC, SMA, 2 PIN
文件页数: 3/4页
文件大小: 351K
代理商: SS1H9-HE3
SS1H9 & SS1H10
Document Number 88747
21-Oct-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
TJ = 150 °C
TJ = 125 °C
TJ = 175 °C
TJ = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
100
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.01
0.10
1
10
100
1000
10000
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
TJ = 150 °C
TJ = 125 °C
TJ = 175 °C
TJ = 25 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal
10
100
1000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
1.0
10
100
0.01
0.1
1
10
100
t, Pulse Duration (sec.)
T
ransient
Impedance
,°C/
W
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
相关PDF资料
PDF描述
SS1H10HE3/5AT 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
SS1P6LHE3/84A 1 A, 60 V, SILICON, SIGNAL DIODE, DO-220AA
SS1P5LHE3/84A 1 A, 50 V, SILICON, SIGNAL DIODE, DO-220AA
SS20015M 2 A, 15 V, SILICON, RECTIFIER DIODE
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