- 您现在的位置：买卖IC网 > PDF目录62720 > SS1H9 (GENERAL SEMICONDUCTOR INC) 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC PDF资料下载
参数资料
| 型号： | SS1H9 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 67K |
| 代理商： | SS1H9 |
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
Dimensions in inches
and (millimeters)
SS1H9 and SS1H10
High Voltage Surface Mount
Schottky Rectifier
Reverse Voltage 90 to 100V
Forward Current 1.0A
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
SS1H9
SS1H10
Unit
Device marking code
S9
S10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum RMS voltage
VRMS
63
70
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
50
A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current at tp = 2.0s, 1KHZ
IRRM
1.0
A
Maximum thermal resistance(2)
RΘJA
88
RΘJL
30
°C/W
Storage temperature range
TSTG
–55 to +175
°C
Maximum operating temperature
TJ
175
°C
Electrical Characteristics (TA = 25°C unless otherwise noted)
Maximum instantaneous
IF = 1.0A, TJ = 25°C
0.77
forward voltage at: (1)
IF = 1.0A, TJ = 125°C
0.62
IF = 2.0A, TJ = 25°C
VF
0.86
V
IF = 2.0A, TJ = 125°C
0.70
Maximum DC reverse current
TJ = 25°C
1.0
A
at rated DC blocking voltage(1)
TJ = 125°C
IR
0.5
mA
Notes: (1) Pulse test: 300s pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile surface mount package
Built-in strain relief Low power loss, high efficiency
For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
11/13/01
DO-214AC (SMA)
Mechanical Data
Case: JEDEC DO-214AC molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: Color band denotes cathode end
Weight: 0.002 ounce 0.064 gram
New
Product
相关PDF资料 |
PDF描述 |
|---|---|
| SS24L-TS01 | 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS6102 | TVS DIODE |
| SS6103AUS | TVS DIODE |
| SS6104 | TVS DIODE |
| SS6118AUS | TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS1H9/61T | 功能描述:肖特基二极管与整流器 90 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS1H9/63T | 功能描述:肖特基二极管与整流器 90 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS1H9_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Surface Mount Schottky Rectifier |
| SS1H9_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Voltage Surface Mount Schottky Rectifier |
| SS1H9-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Surface Mount Schottky Rectifier |
发布紧急采购，3分钟左右您将得到回复。