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参数资料
| 型号： | SS1P6LHE3/85A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 101K |
| 代理商： | SS1P6LHE3/85A |
New Product
SS1P5L & SS1P6L
Vishay General Semiconductor
Document Number: 89063
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Current Density Surface Mount
Schottky Barrier Rectifier
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1 A
VRRM
50 V, 60 V
IFSM
50 A
EAS
11.25 mJ
VF at IF = 1.0 A
0.43 V
TJ max.
150 °C
DO-220AA (SMP)
eSMPTM Series
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1P5L
SS1P6L
UNIT
Device marking code
15L
16L
Maximum repetitive peak reverse voltage
VRRM
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Non-repetitive avalanche energy at IAS = 1.5 A, TA = 25 °C
EAS
11.25
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage (1)
IF = 1.0 A
TA = 25 °C
TA = 125 °C
VF
0.52
0.43
0.59
0.52
V
Reverse current (2)
rated VR
TA = 25 °C
TA = 125 °C
IR
-
1.6
100
10
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
80
-
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SS1P6LHM3/84A | 功能描述:肖特基二极管与整流器 60volt 1.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS1P6LHM3/85A | 功能描述:肖特基二极管与整流器 60volt 1.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS1P6LHM3-84A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS1P6LHM3-85A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS1P6L-M3/84A | 功能描述:肖特基二极管与整流器 60volt 1.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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