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参数资料
| 型号： | SS22S-E3/61T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 73K |
| 代理商： | SS22S-E3/61T |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89407
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS22S, SS23S, SS24S
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Note
(1) PCB mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage
IF = 1 A
TJ = 25 °C
VF (1)
0.436
-
V
IF = 2 A
0.517
0.55
Reverse current
Rated VR
TJ = 25 °C
IR (2)
13
200
μA
TJ = 100 °C
1.65
8
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
130
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS22S
SS23S
SS24S
UNIT
Typical thermal resistance
RJA (1)
75
°C/W
RJL (1)
25
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS24S-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SS24S-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
2.4
2.0
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
175
P.C.B. Mounted on
0.4" x 0.4" (10 mm x 10 mm)
Copper Pad Areas
A
v
erage
Forwar
d
Rectified
Curr
ent
(A)
Lead Temperature (°C)
Resistive or Inductive Load
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
Average Forward Current (A)
A
v
erage
Power
Lo
ss
(W)
D = 0.1
D = 0.2
D = 0.3 D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
相关PDF资料 |
PDF描述 |
|---|---|
| SS25S-M3/61T | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS26S-M3/5AT | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS25 | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS22 | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS23 | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS22SMA | 制造商:GXELECTRONICS 制造商全称:Gaomi Xinghe Electronics Co., Ltd. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFLER |
| SS22T3 | 功能描述:肖特基二极管与整流器 2A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS22T3G | 功能描述:肖特基二极管与整流器 SCHOTTKY RECTIFIER 2A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS22-TP | 功能描述:肖特基二极管与整流器 Rectifier 20V 50A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS22-TR | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY 20V 2A 2PIN SMB - Tape and Reel |
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