参数资料
型号: SS22T3
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 109K
描述: DIODE SCHOTTKY POWER 2A 20V SMB
产品变化通告: Product Discontinuation 27/Jun/2007
标准包装: 2,500
二极管类型: 肖特基
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 2A
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 2A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 400µA @ 40V
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: SMB
包装: 带卷 (TR)
其它名称: SS22T3OS
SS22T3G, SS24T3G, NRVBSS24T3G
http://onsemi.com
4
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
Figure 9. Thermal Response — Junction to Case
Figure 10. Thermal Response — Junction to Ambient
5.0 10 20 25 35 40 30 3530
5.0 10 2015
0
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
25 40
65
0
105
85
75
C, CAPACITANCE (pF)
T
15
95
115
125
, DERATED OPERATING
TEMPERATURE ( C)
J
°
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ
therefore must include forward and reverse power effects. The allowable operating
TJ
may be calculated from the equation: T
J
= T
Jmax
?
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
?
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja
= 24
°C/W
43°C/W
63°C/W
80°C/W
93°C/W
TJ
= 25
°C
0.1
0.00001
t, TIME (s)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
R
0.0001 0.001 0.01
, TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
T
1.0
10 100 1000
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t)
= R
tjl*r(t)
0.1
0.00001
t, TIME (s)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
0.0001 0.001 0.01
1.0 10 100 1000
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t)
= R
tjl*r(t)
R , TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
T
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