参数资料
型号: SS24T3G
厂商: ON SEMICONDUCTOR
元件分类: 参考电压二极管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 2 A, 40 V, SILICON, RECTIFIER DIODE
封装: LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN
文件页数: 2/5页
文件大小: 64K
代理商: SS24T3G
SS22, SS24
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SS22
SS24
V
RRM
V
RWM
V
R
20
40
V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 100
°
C)
I
O
2.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave,
100 kHz, T
C
= 105
°
C)
I
FRM
3.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
75
A
Storage/Operating Case Temperature
T
stg
, T
C
55 to +150
°
C
Operating Junction Temperature (Note 1)
T
J
55 to +150
°
C
Voltage Rate of Change
(Rated V
R
, T
J
= 25
°
C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoLead (Note 2)
Thermal Resistance,
JunctiontoAmbient (Note 3)
R
JL
R
JA
24
80
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage
(Note 4)
see Figure 2
(i
F
= 2.0 A)
v
F
T
J
= 25
°
C
T
J
= 125
°
C
V
0.50
0.46
Maximum Instantaneous Reverse Current (Note 4)
see Figure 4
(V
R
= 40 V)
I
R
T
J
= 25
°
C
T
J
= 100
°
C
mA
0.4
5.7
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Pulse Test: Pulse Width
250 s, Duty Cycle
2.0%.
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