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参数资料
| 型号： | SS25S-M3/61T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 74K |
| 代理商： | SS25S-M3/61T |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89410
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS25S, SS26S
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Note
(1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage
IF = 1.0 A
TA = 25 °C
VF (1)
0.51
-
V
IF = 2.0 A
0.60
0.75
IF = 1.0 A
TA = 125 °C
0.43
-
IF = 2.0 A
0.53
0.62
Maximum reverse current
Rated VR
TA = 25 °C
IR (2)
-
200
μA
TA = 125 °C
1.5
10
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS25S
SS26S
UNIT
Typical thermal resistance
RJA (1)
100
°C/W
RJL (1)
28
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS26S-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SS26S-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
80
100
110
120
130
140
0
1.2
2.4
150
Resistive or Inductive Load
P. C. B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
Cu
rrent
(A)
90
0.8
2.0
0.4
1.6
1.4
1.2
0.8
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
2.4
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
1.0
0.6
D = t
p/T
t
p
T
相关PDF资料 |
PDF描述 |
|---|---|
| SS26S-M3/5AT | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS25 | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS22 | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS23 | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS2P2LHE3/84A | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-220AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS25-TP | 功能描述:肖特基二极管与整流器 Rectifier 50V 50A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS-25U | 制造商:Shinagawa Shoko 功能描述: |
| SS26 | 功能描述:肖特基二极管与整流器 2a/60V Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS26 R4 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 2A 2-Pin SMB T/R 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 60V 2A 2-Pin SMB T/R |
| SS26 | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE SCHOTTKY 2.0A 60V 制造商:HY Electronic Corp 功能描述:Schottky Diode 2A 60V SMB 制造商:SPC Multicomp 功能描述:DIODE RECTIFIER 2A 60V DO-214AA 制造商:SPC Multicomp 功能描述:DIODE, RECTIFIER, 2A, 60V, DO-214AA |
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