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参数资料
| 型号： | SS26-HE3/5BT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 335K |
| 代理商： | SS26-HE3/5BT |
SS22 thru SS26
Vishay General Semiconductor
Document Number: 88748
Revision: 23-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
20 V to 60 V
IFSM
75 A
VF
0.50 V, 0.70 V
TJ max.
125 °C, 150 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS22
SS23
SS24
SS25
SS26
UNIT
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Max. average forward rectified current at TL (Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Ω
VC
8.0
KV
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SS22HE3/52T | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS25HE3/5BT | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS26HE3/52T | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS24-E3/52T | 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS22-E3 | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS26L | 功能描述:肖特基二极管与整流器 2A,60V,SMD SCHOTTKY Rect RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS26-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:2 Amp Schottky Rectifier 20 to 200 Volts |
| SS26-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:2A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| SS26-LTP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 60V 2A 2-Pin SMA T/R |
| SS26R4 | 制造商:Taiwan Semiconductor 功能描述:Schottky 2Amp 60v, SS26 R4 |
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