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参数资料
| 型号： | SS26 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 60 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, CASE 403A-03, SMB, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 97K |
| 代理商： | SS26 |
Semiconductor Components Industries, LLC, 2001
September, 2001 - Rev. 0
139
Publication Order Number:
SS26/D
SS26
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal-to-silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
Compact Package with J-Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over-Voltage Protection
Low Forward Voltage Drop
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8″
Weight: 95 mg (approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix
to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Marking: SS26
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(At Rated VR, TL = 95°C)
IO
2.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
40
A
Storage/Operating Case
Temperature
Tstg, TC
-55 to +150
°C
Operating Junction Temperature
TJ
-55 to +125
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
Device
Package
Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
http://onsemi.com
SS26
SMB
2500/Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
60 VOLTS
MARKING DIAGRAM
SS26
SS26 = Device Code
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| SS3P5L-G3/87A | 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P6LHG3/87A | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-277A |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SS26 R4 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 2A 2-Pin SMB T/R 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 60V 2A 2-Pin SMB T/R |
| SS26 | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE SCHOTTKY 2.0A 60V 制造商:HY Electronic Corp 功能描述:Schottky Diode 2A 60V SMB 制造商:SPC Multicomp 功能描述:DIODE RECTIFIER 2A 60V DO-214AA 制造商:SPC Multicomp 功能描述:DIODE, RECTIFIER, 2A, 60V, DO-214AA |
| SS26/1T | 功能描述:肖特基二极管与整流器 60 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS26/2 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 60V 2A 2-Pin SMB T/R 制造商:Vishay Semiconductors 功能描述:Diode Schottky 60V 2A 2-Pin SMB T/R |
| SS26/2BT | 功能描述:肖特基二极管与整流器 60 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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