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参数资料
| 型号： | SS26S-HE3/61T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 95K |
| 代理商： | SS26S-HE3/61T |
SS25S & SS26S
Vishay General Semiconductor
Document Number: 89055
Revision: 02-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
20 V to 60 V
IFSM
40 A
VF at IF = 2.0 A
0.53 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS25S
SS26S
UNIT
Device marking code
25S
26S
Maximum repetitive peak reverse voltage
VRRM
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Operating junction temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SS26S-E3/61T | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS26-TP | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS28-TP | 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS25-TP | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS26P | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS26S-M3/5AT | 制造商:Vishay Semiconductors 功能描述:2A,60V,SM SCHOTTKY RECT. |
| SS26S-M3/61T | 制造商:Vishay Semiconductors 功能描述:2A,60V,SM SCHOTTKY RECT. |
| SS26S-M3-5AT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifier |
| SS26S-M3-61T | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifier |
| SS26T3 | 功能描述:肖特基二极管与整流器 2A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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