参数资料
型号: SS2PH10HM3/85A
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-220AA
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件页数: 1/4页
文件大小: 81K
代理商: SS2PH10HM3/85A
Document Number: 84682
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 30-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Surface Mount Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
SS2PH9, SS2PH10
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters and polarity protection applications.
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
90 V, 100 V
IFSM
50 A
EAS
11.25 mJ
VF at IF = 1.0 A
0.62 V
IR max.
1.0 μA
TJ max.
175 °C
DO-220AA (SMP)
eSMP
Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS2PH9
SS2PH10
UNIT
Device marking code
29
210
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相关PDF资料
PDF描述
SS2PH9HM3/85A 2 A, 90 V, SILICON, RECTIFIER DIODE, DO-220AA
SS2PH10HM3/84A 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-220AA
SS34 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB
SS35 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
SS3P3LHE3/87A 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
相关代理商/技术参数
参数描述
SS2PH10-M3/84A 功能描述:肖特基二极管与整流器 2.0 Amp 100 Volt 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS2PH10-M3/85A 功能描述:肖特基二极管与整流器 2.0 Amp 100 Volt 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS2PH9 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Voltage Surface Mount Schottky Barrier Rectifier
SS2PH9_11 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Voltage Surface Mount Schottky Barrier Rectifier
SS2PH9-E3/84A 功能描述:肖特基二极管与整流器 90 Volt 2.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel