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参数资料
| 型号： | SS32S-E3/5AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 97K |
| 代理商： | SS32S-E3/5AT |
New Product
SS32S, SS33S & SS34S
Vishay General Semiconductor
Document Number: 89070
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
(Note: These devices are not Q101 qualified.)
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3 A
VRRM
20 V, 30 V, 40 V
IFSM
35 A
VF at IF = 3.0 A
0.61 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32S
SS33S
SS34S
UNIT
Device marking code
32S
33S
34S
V
Maximum repetitive peak reverse voltage
VRRM
20
30
40
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
35
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SS33S-E3/61T | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS32S-E3/61T | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SS3P3L-M3/86A | 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P3L-M3/87A | 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P3LHM3/86A | 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS32-SS320 | 制造商:KINGTRONICS 制造商全称:KINGTRONICS 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| SS33 | 功能描述:肖特基二极管与整流器 3a 30V Rectifier Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS33 R6 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 30V 3A 2-Pin SMC T/R 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 30V 3A 2-Pin SMC T/R |
| SS-3-3.8-E/N | 制造商:Interconnect Devices Inc (IDI) 功能描述:SPRING CONTACT PROBE |
| SS-3-3.8-E/N S/C W/HOLE .373 OAL | 功能描述:触点探头 HEADED .075 RADIUS W/HOLE .373 RoHS:否 制造商:IDI 类型:Probes 尖端类型:Spherical Radius 长度:8.26 mm 电流额定值:10 A 弹力:2.3 oz 行程:1.52 mm 系列:101050 |
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