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参数资料
| 型号： | SS3H9 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | PLASTIC, SMC, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | SS3H9 |
New
Product
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
Cathode Band
SS3H9 and SS3H10
High Voltage Surface Mount
Schottky Barrier Rectifiers
Reverse Voltage 90 to 100V
Forward Current 3.0A
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
SS3H9
SS3H10
Unit
Device marking code
MS9
MS10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at: TL = 115°C
IF(AV)
3.0
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
100
A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current at tp = 2.0
s, 1KHZ
IRRM
1.0
A
Critical rate of rise of reverse voltage
dv/dt
10,000
V/
s
Typical thermal resistance – junction to lead TL = 25°C
R
θJL
9.7
°C/W
– junction to ambient(2)
R
θJA
32
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
Electrical Characteristics (TA = 25°C unless otherwise noted)
Maximum instantaneous
IF = 3.0A, TJ = 25°C
VF
0.8
V
forward voltage at:(1)
IF = 3.0A, TJ = 125°C
0.65
Maximum DC reverse current
TJ = 25°C
IR
20
A
at rated DC blocking voltage
TJ = 125°C
4
mA
Note: (1) Pulse test: 300
s pulse width, 1% duty cycle
(2) PCB mounted
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile surface mount package
Built-in strain relief
Low power loss, high efficiency
For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Dimensions in inches
and (millimeters)
9/7/01
Mounting Pad Layout
Mechanical Data
Case: JEDEC DO-214AB molded plastic body
Terminals: Solder plated, solderable per
MIL-STD750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 oz., 0.25g
0.185 MAX.
(4.69 MAX.)
0.121 MIN.
(3.07 MIN.)
0.060 MIN.
(1.52 MIN.)
0.320 REF
DO-214AB (SMC)
相关PDF资料 |
PDF描述 |
|---|---|
| SS3H9 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H10-HE3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H9-E3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3P5L-M3/86A | 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P5LHM3/86A | 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS3H9/59T | 功能描述:肖特基二极管与整流器 90 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS3H9/9AT | 功能描述:肖特基二极管与整流器 90 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS3H9/9CT | 功能描述:肖特基二极管与整流器 90 Volt 3.0 Amp 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS3H9_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Surface Mount Schottky Rectifier |
| SS3H9-E3/57T | 功能描述:肖特基二极管与整流器 3.0 Amp 90 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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