参数资料
型号: SS3P3-HE3/85A
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA
封装: ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件页数: 2/4页
文件大小: 353K
代理商: SS3P3-HE3/85A
www.vishay.com
2
Document Number 88944
07-Feb-06
Vishay General Semiconductor
SS3P3
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 15 x 15 mm copper pad areas.
RθJL is measured at the terminal of cathode band. RθJC is measured at the top centre of the body
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS3P3
UNIT
Typical thermal resistance (2)
RθJA
RθJL
ReJC
95
15
20
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS3P3-E3/84A
0.024
84A
3000
7" Diameter Plastic Tape & Reel
SS3P3-E3/85A
0.024
85A
10000
13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
3.0
2.5
2.0
1.5
1.0
0.5
0
80
90
100
110
120
130
140
150
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(
A)
Lead Temperature (°C)
TJ measured
at the cathode band terminal
50
40
30
20
10
0
1
10
100
Number of Cycles at 50 Hz
P
e
ak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
100
10
1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
10
20
30
40
50
60
70
8090
100
100000
10000
1000
100
10
1
0.1
Percent of Rated Peak Reverse Voltage (%)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
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