参数资料
型号: SS3P3HE3/84A
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 0K
描述: DIODE SCHOTTKY 3A 30V SMP
标准包装: 3,000
系列: eSMP™
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 580mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 30V
安装类型: 表面贴装
封装/外壳: DO-220AA
供应商设备封装: DO-220AA(SMP)
包装: 带卷 (TR)
New Product
VlSHAY? SS3P37 Vishay General Semiconductor
Percent ol Rated Peak Reverse Voltage (%) I - Pulse Duration (5)
100 1000
5
5 E
(3 10 8
5 0
e e5 g 100
0 m
3 e
W 5
5 e
5 RE
E0.1 10
0.1 0.3 0.5 0 7 0 9 1.1 1.3Instantaneous Forward Voltage (V) Reverse Voltage (V)Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 ? Typical Junction Capacitance
100 000 1000
10000
A 1000 100
100
Instantaneous Reverse Leakage
Current (DA
5
Transient Thermal Impedance (QC/W)
3
Fig. A - Typical Reverse Leakage Characteristics Fig. 6 ? Typical Transient Thermal Impedance
PACKAGE ouTLINE DIMENSIONS in inches (millimeters)
Do—22oAA (sMP)
Cathode Band 4.‘ ‘.7 0.012 (0.30) REF
012613.19) T Mfezm “@0400 150 (4 00)0 146 (3 70)‘<7 (Z67) 4>‘._>._>
f I0.006 (2.10) 0.055 (1.35) 0.035 (0.91)
0.074 (1.00) 0.041 (1.05) 0.024 (0.61)
I i— *1
0 142 (3.61) I 0.032 (0.30)
0025 0030
M05 (0 635) (0.762)
0 013 (0.35) T;
0 004 (0.10) 0.045 (1.15)
L 0.035 (0.05) T
0100 7 7 0050
I7 I 0.012 (0.30) 0.010 (0.45) I (2.54) (1.27)
T 90000 (0.00) 0.005 (0.15) T ‘ 41Document Number: 88944 For technical questions within your region, please contact one of the following: www.visnay.com
Revision: 19-Apr-11 DiodesAmerICas@VIShay.com, DiodesAsia@vishay.com, DiodesEur0pe@vishay.Com 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay_com/doc?91000
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