参数资料
型号: SS3P4L-G3/86A
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 3 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A
封装: GREEN, PLASTIC, SMPC, 3 PIN
文件页数: 1/5页
文件大小: 105K
代理商: SS3P4L-G3/86A
New Product
SS3P3L & SS3P4L
Vishay General Semiconductor
Document Number: 88986
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Low thermal resistance
“Green” molding compound (GMC)
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
“G” vs. “E” suffix defines molding as none green, “E”,
or green molding compound (GMC) “G”.
“G” is defined as halogen-free (HF) and antimony-free
molding compound.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and G3 suffix for consumer grade, meets JESD 201
class 1A whisker test, HE3 and HG3 suffix for
high reliability grade (AEC Q101 qualified), meets
JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
Note:
There is no industry standard for definition of HF, or GMC for
components.
PRIMARY CHARACTERISTICS
IF(AV)
3 A
VRRM
30 V, 40 V
IFSM
150 A
EAS
20 mJ
VF at IF = 3.0 A
0.335 V
TJ max.
150 °C
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3P3L
SS3P4L
UNIT
Device marking code
S33
S34
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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相关代理商/技术参数
参数描述
SS3P4LHE3/86A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS3P4LHE3/87A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS3P4LHM3/86A 功能描述:肖特基二极管与整流器 3.0 Amp 40 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS3P4LHM3/87A 功能描述:肖特基二极管与整流器 3.0 Amp 40 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS3P4LHM3-86A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers