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参数资料
| 型号： | SS3P5-HE3/84A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-220AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 91K |
| 代理商： | SS3P5-HE3/84A |
Vishay General Semiconductor
SS3P5 & SS3P6
New Product
Document Number 88997
03-Aug-06
www.vishay.com
1
High-Current Density Surface Mount Schottky Rectifier
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-220AA (SMP)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V, 60 V
IFSM
45 A
EAS
11.25 mJ
VF at IF = 3.0 A
0.61 V
Tj max.
150 °C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3P5
SS3P6
UNIT
Device marking code
35
36
Maximum repetive peak reverse voltage
VRRM
50
60
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
45
A
Non-repetitive avalanche energy
at IAS = 1.5 A, L = 10 mH, Tj = 25 °C
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/us
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
UNIT
Maximum instantaneous forward voltage (1)
at IF = 3 A, Tj = 25 °C
at IF = 3 A, Tj = 125 °C
VF
0.71
0.61
0.78
0.65
V
Maximum reverse current at rated VR
(1)
Tj = 25 °C
Tj = 125 °C
IR
-
2.0
100
10
A
mA
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
80
pF
相关PDF资料 |
PDF描述 |
|---|---|
| SS3P5-HE3/85A | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS3P6-HE3/84A | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS3P5LHE3/86A | 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P6L-E3/86A | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P5L-E3/87A | 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS3P5HM3/84A | 功能描述:肖特基二极管与整流器 50volt 3.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS3P5HM3/85A | 功能描述:肖特基二极管与整流器 50volt 3.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS3P5L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low VF High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS3P5L_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low VF High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS3P5L_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low VF High Current Density Surface Mount Schottky Barrier Rectifiers |
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