参数资料
型号: SS3P5HE3/85A
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 84K
描述: DIODE SCHOTTKY 3A 50V SMP
标准包装: 10,000
系列: eSMP™
二极管类型: 肖特基
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 780mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 100µA @ 50V
安装类型: 表面贴装
封装/外壳: DO-220AA
供应商设备封装: DO-220AA(SMP)
包装: 带卷 (TR)
‘lllvVISHM ___E____________________________£¥EEEE§§EE§7 www'V'Shay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER TEST coNDITIoNS
Maximum instantaneous forward voltage
Maximum reverse Current at rated VH
Typical junction capacitance 4.0 V, 1 MHZ
N ates(1) Pulse test: 300 us pulse width, 1 % duty Cycle(2) Pulse test: Pulse width g 40 ms
PARAMETER
Typical thermal resistance ll)
N ate(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm Copper pad areas. R9JLis measured
at the terminal of Cathode band. Rem is measured at the top center of the body
PREFERRED PIN
SS3P6-M3/84A 7" diameter plastic rape and reel
sssps-Ms/85A
ss3P6HM3/a4A(:)
ss3P6HM3/a5A(:)
NoteW Automotive grade
RATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 0C unless othenivise specified)
an
Resistive or Inductive Loadi 2.5 AE E: 2.0 32 o0 JE ‘T;{E 1.5 3
LL ma’ 1.0 3O, EE 9g 0 5 TL Measured <(‘( ’ at lhe Cathode Band Terminal
g -- E
0so 90 I00 I10 I20 I30 I40 I50 0 05 In is 20 25 an 35
Lead Temperature (“(3) Average Forward Current (A)
Fig. 1 - Forward Current Derating Cun/e Fig. 2 - Forward Power Loss Characteristics
Revision: 19-Nov-13 2 Document Number: 88997
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.Com, DiodesEurope@vishay.Com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.oomzdoo?9100!!
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