参数资料
型号: SS5P4HM3/86A
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN
文件页数: 3/5页
文件大小: 91K
代理商: SS5P4HM3/86A
Document Number: 88982
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS5P3, SS5P4
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
Lead Temperature (°C)
6.0
5.0
4.0
3.0
2.0
1.0
0
80
90
100
110
120
130
140
150
Resistive or Inductive Load
T
L measured
at the Cathode Band Terminal
0
0.5
1.0
1.5
2.0
2.5
3.0
012
3
4
5
6
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
0
0.2
0.4
0.6
0.8
1.0
100
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
orw
ard
C
u
rrent
(A)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
1000
100
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
0.001
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.1
1
10
100
1000
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
Junction to Ambient
0.01
0.1
1
10
100
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/W)
相关PDF资料
PDF描述
SS5P3HM3/86A 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
SS5P4HM3/87A 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A
SS5P4-M3/87A 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A
SS5P6-E3/86A 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-277A
SS5P9-E3/86A 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A
相关代理商/技术参数
参数描述
SS5P4HM3-87A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P4-M3/86A 功能描述:肖特基二极管与整流器 5.0 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS5P4-M3/87A 功能描述:肖特基二极管与整流器 5.0 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS5P4-M3-86A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P4-M3-87A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers