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参数资料
| 型号： | SS6622US |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.2 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, MELF-A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 52K |
| 代理商： | SS6622US |
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-Mail Addre1N - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5090, REV. A
Ultrafast Recovery Rectifier
Hermetic, non-cavity glass package
Metallurgically bonded
Operating and Storage Temperature: -65oC to +175o
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
All ratings are at TA = 25
oC unless otherwise specified.
SS6620,U,US thru SS6625,U,US
Rating
Symbol
Condition
Max
Units
WORKING PEAK REVERSE VOLTAGE
1N6620, U, US
1N6621, U ,US
1N6622, U, US
1N6623, U, US
1N6624 ,U, US
1N6625, U, US
VRWM
200
400
600
800
900
1000
Volts
AVERAGE RECTIFIED FORWARD CURRENT
1N6620, U, US thru 1N6622, U, US
1N6623, U, US thru 1N6625, U, US
Io
1.2
1.0
Amps
PEAK FORWARD SURGE CURRENT
1N6620, U, US thru 1N6624,U, US
1N6625, U, US
IFSM
Tp=8.3ms
20
15
A(pk)
MAXIMUM REVERSE CURRENT
1N6620, U, US thru 1N6624,U, US
1N6625, U, US
IR @ VRWM
Tj = 25
oC
0.5
1.0
μAmps
MAXIMUM REVERSE CURRENT
1N6620, U, US thru 1N6624,U, US
1N6625, U, US
IR @ VRWM
Tj = 150
oC
150
200
μAmps
MAX. PEAK FORWARD VOLTAGE (PULSED)
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
VFM
IF=2.0A
IF=1.5μA
1.60
1.80
1.95
Volts
PEAK RECOVERY CURRENT
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
IRM
IF=2A,
100A/
μ
3.5
4.2
5.0
A(pk)
MAXIMUM REVERSE RECOVERY TIME
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
Trr
IF=0.5A
IRM =1.0A
30
50
60
ns
FORWARD RECOVERY VOLTAGE
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
VFRM
IF=0.5A
tr=12ns
12
18
30
Volts
THERMAL RESISTANCE (Axial)
1N6620 thru 1N6625
R
θ
JL
L=.375
38
oC/W
THERMAL RESISTANCE (MELF)
1N6620U,US thru 1N6625U,US
R
θ
JC
L=0
20
oC/W
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