参数资料
型号: SS6P4C-M3/86A
厂商: Vishay General Semiconductor
文件页数: 2/5页
文件大小: 90K
描述: DIODE SCHOTTKY 6A 40V SMPC
标准包装: 1,500
系列: eSMP™
电压 - 在 If 时为正向 (Vf)(最大): 650mV @ 3A
电流 - 在 Vr 时反向漏电: 200µA @ 40V
电流 - 平均整流 (Io)(每个二极管): 3A
电压 - (Vr)(最大): 40V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-277,3-PowerDFN
供应商设备封装: TO-277A
包装: 带卷 (TR)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89114
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 10-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT AR
E SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS6P4C
Vishay General Semiconductor
New Product
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
Note
(1)
Automotive grade
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
per diode
IF
= 1.5 A
TA
= 25 °C
= 3.0 A 0.57 0.65
VF
(1)
0.47 -
V
IF
IF
= 1.5 A
TA
= 125 °C
= 3.0 A 0.53 0.60
0.40 -
IF
Reverse current per diode Rated VR
TA
= 25 °C
IR
(2)
= 125 °C 6 20 mA
17 200 μA
TA
Typical junction capacitance per diode 4.0 V, 1 MHz CJ
100 - pF
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL SS6P4C
UNIT
Typical thermal resistance per diode
R?JA
(1)
80
°C/W
R?JL
4
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS6P4C-M3/86A 0.10 86A 1500
7" diameter plastic tape and reel
SS6P4C-M3/87A 0.10 87A 6500
13" diameter plastic tape and reel
SS6P4CHM3/86A (1)
0.10 86A 1500
7" diameter plastic tape and reel
SS6P4CHM3/87A (1)
0.10 87A 6500
13" diameter plastic tape and reel
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