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参数资料
| 型号： | SS8P2CL-G3/87A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 4 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | GREEN, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 104K |
| 代理商： | SS8P2CL-G3/87A |
New Product
SS8P2CL & SS8P3CL
Vishay General Semiconductor
Document Number: 89030
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Low thermal resistance
“Green” molding compound (GMC)
Meets MSL level 1, per J-STD-020
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
“G” vs. “E” suffix defines molding as none green, “E”,
or green molding compound (GMC) “G”.
“G” is defined as halogen-free (HF) and antimony-free
molding compound.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and G3 suffix for consumer grade, meets JESD 201
class 1A whisker test, HE3 and HG3 suffix for
high reliability grade (AEC Q101 qualified), meets
JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
Note:
There is no industry standard for definition of HF, or GMC for
components.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 4 A
VRRM
20 V, 30 V
IFSM
120 A
EAS
20 mJ
VF at IF = 4 A
0.41 V
TJ max.
150 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8P2CL
SS8P3CL
UNIT
Device marking code
S82CL
S83CL
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum average forward rectified current (Fig. 1)
total device
per diode
IF(AV)
8
4
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load per diode
IFSM
120
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SS8PH10-G3/86A | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH10HG3/86A | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH9HG3/86A | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH9-G3/86A | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH9-G3/87A | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS8P2CLHE3/86A | 功能描述:肖特基二极管与整流器 8.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8P2CLHE3/87A | 功能描述:肖特基二极管与整流器 8.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8P2CLHM3/86A | 功能描述:肖特基二极管与整流器 8.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8P2CLHM3/87A | 功能描述:肖特基二极管与整流器 8.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8P2CL-M3/86A | 功能描述:肖特基二极管与整流器 8.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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