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参数资料
| 型号： | SS8P2LHM3/87A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 101K |
| 代理商： | SS8P2LHM3/87A |
SS8P2L, SS8P3L
Vishay General Semiconductor
Document Number: 89001
Revision: 24-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
High Current Density Surface Mount
Schottky Barrier Rectifiers
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free
according
to
IEC
61249-2-21
definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3
suffix meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
VRRM
20 V, 30 V
IFSM
150 A
EAS
20 mJ
VF at IF = 8.0 A
0.472 V
TJ max.
150 °C
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8P2L
SS8P3L
UNIT
Device marking code
S82
S83
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum average forward rectified current (fig. 1)
IF(AV)
8.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SS8P2L-M3/86A | 8 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8P2L-M3/87A | 8 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8P5C-M3/86A | 4 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8P5CHM3/87A | 4 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8P5CHM3/86A | 4 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS8P2L-M3/86A | 功能描述:肖特基二极管与整流器 8.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8P2L-M3/87A | 功能描述:肖特基二极管与整流器 8.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8P3C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier |
| SS8P3C_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier |
| SS8P3C-E3/86A | 功能描述:肖特基二极管与整流器 8.0 Amp 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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