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参数资料
| 型号： | SS8PH10-G3/86A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | GREEN, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 107K |
| 代理商： | SS8PH10-G3/86A |
New Product
SS8PH9 & SS8PH10
Vishay General Semiconductor
Document Number: 88989
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
Figure 3. Typical Instantaneous Forward Characteristics
0
2
1
3
4
5
6
7
8
9
10
100
110
120
130
140
150
160
170
180
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Lead Temperature (°C)
T
L measured
at the Cathode Band Terminal
Resistive or Inductive Load
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = t
p/T
t
p
T
0.01
0.1
1
10
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
T
A = 175 °C
T
A = 125 °C
T
A = 150 °C
T
A = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.001
0.01
0.1
1
10
100
1000
10 000
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
T
A = 175 °C
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
10
100
1000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
0.1
1
10
100
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
Junction to Ambient
相关PDF资料 |
PDF描述 |
|---|---|
| SS8PH10HG3/86A | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH9HG3/86A | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH9-G3/86A | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH9-G3/87A | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS8PH9HM3/87A | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SS8PH10HE3/86A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount High-Voltage Schottky Rectifier |
| SS8PH10HE3/87A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount High-Voltage Schottky Rectifier |
| SS8PH10HM3/86A | 功能描述:肖特基二极管与整流器 8.0 Amp 100 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8PH10HM3/87A | 功能描述:肖特基二极管与整流器 8.0 Amp 100 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SS8PH10HM3-86A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount High Voltage Schottky Rectifier |
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