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参数资料
| 型号： | SS8PH9-M3/86A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 93K |
| 代理商： | SS8PH9-M3/86A |
New Product
SS8PH9, SS8PH10
www.vishay.com
Vishay General Semiconductor
Revision: 28-Jun-11
1
Document Number: 88989
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
High Voltage Schottky Rectifier
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Guardring for overvoltage protection
High barrier technology, TJ = 175 °C maximum
Low leakage current
Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
VRRM
90 V, 100 V
IFSM
150 A
EAS
20 mJ
VF at IF = 8.0 A
0.720 V
IR
0.18 μA
TJ max.
175 °C
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMP Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8PH9
SS8PH10
UNIT
Device marking code
8H9
8H10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
8.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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