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参数资料
| 型号： | SSA23L-HE3/61T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 90K |
| 代理商： | SSA23L-HE3/61T |
New Product
SSA23L & SSA24
Vishay General Semiconductor
Document Number: 88882
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Current Density Surface Mount Schottky Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
30 V, 40 V
IFSM
60 A
EAS
11.25 mJ
VF
0.38 V, 0.42 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SSA23L
SSA24
UNIT
Device marking code
23L
S24
V
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum RMS voltage
VRMS
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified currentat TL (Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single halfsine-wave
superimposed on rated load
IFSM
60
A
Non-repetitive avalanche energy at TA = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SSA33L-HE3/5AT | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SSA34-HE3 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SSA34-E3 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SSA34E3 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SSA34HE3 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SSA23L-M3/5AT | 制造商:Vishay Semiconductors 功能描述:2A,30V,SM SCHOTTKY RECT |
| SSA23L-M3/61T | 制造商:Vishay Semiconductors 功能描述:2A,30V,SM SCHOTTKY RECT |
| SSA23L-M3-5AT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Current Density Surface Mount Schottky Rectifier |
| SSA23L-M3-61T | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Current Density Surface Mount Schottky Rectifier |
| SSA24 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Current Density Surface Mount Schottky Rectifier |
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