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参数资料
| 型号： | SSA24-HE3/61T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 94K |
| 代理商： | SSA24-HE3/61T |
Vishay General Semiconductor
SSA23L & SSA24
New Product
Document Number 88882
07-Jul-06
www.vishay.com
1
High-Current Density Surface Mount Schottky Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
2.0 A
VRRM
30 V, 40 V
IFSM
60 A
EAS
11.25 mJ
VF
0.38 V, 0.42 V
Tj max.
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SSA23L
SSA24
UNIT
Device marking code
23L
S24
V
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum RMS voltage
VRMS
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified currentat TL (see Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single halfsine-wave
superimposed on rated load
IFSM
60
A
Non-repetitive avalanche energy at TA = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
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