参数资料
| 型号： | SSM2018TPZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 10/16页 |
| 文件大小： | 0K |
| 描述： | IC AMP AUDIO MONO CLASS AB 16DIP |
| 标准包装： | 25 |
| 放大器类型： | 音频 |
| 电路数： | 1 |
| 转换速率： | 5 V/µs |
| 增益带宽积： | 14MHz |
| 电流 - 输入偏压： | 250nA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 11mA |
| 电压 - 电源，单路/双路(±)： | 10 V ~ 36 V，±5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 16-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 16-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 775 (CN2011-ZH PDF) |
REV. B
–3–
SSM2018T
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage
Dual Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±V
S
Operating Temperature Range . . . . . . . . . . . . –40
∞C to +85∞C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
∞C to +150∞C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . 150
∞C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300
∞C
THERMAL CHARACTERISTICS
Thermal Resistance
2
16-Lead Plastic DIP
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
∞C/W
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
∞C/W
16-Lead SOIC
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
∞C/W
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
∞C/W
TRANSISTOR COUNT
Number of Transistors
SSM2018T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
ESD RATINGS
883 (Human Body) Model . . . . . . . . . . . . . . . . . . . . . . . 500 V
EIAJ Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operation
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
JA is specified for worst-case conditions, i.e.;
JA is specified for device in socket for
P-DIP and device soldered in circuit board for SOIC package.
PIN CONFIGURATION
16-Lead Plastic DIP
and SOL
+I1–G
V+
BAL
COMP 1
+IN
–IN
MODE
VC
V–
–I1–G
–IG
VG
GND
COMP 2
COMP 3
SSM2018T
V1–G
TOP VIEW
(Not to Scale)
ORDERING GUIDE
Model
Temperature Range
Package Option
1
SSM2018TP
–40
∞C to +85∞C
N-16
SSM2018TS
2
–40
∞C to +85∞C
R-16
1N = Plastic DIP; R = SOL.
2Not for new designs; obsolete April 2002.
V+
1 F
150k
18k
V+
18k
VIN+
1 F 18k
VIN–
47pF
1 F
50pF
1k
VCONTROL
3k
VOUT
V–
SSM2018T
SSM2018T Typical Application Circuit
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the SSM2018T features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precau-
tions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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