参数资料
型号: SSM2375CBZ-REEL7
厂商: Analog Devices Inc
文件页数: 1/16页
文件大小: 0K
描述: IC AMP AUDIO 4.28W MONO D 9WLCSP
产品变化通告: 8mm Carrier Tape Changes 28/Feb/2012
标准包装: 1
类型: D 类
输出类型: 1-通道(单声道)
在某负载时最大输出功率 x 通道数量: 3.17W x 1 @ 4 欧姆
电源电压: 2.5 V ~ 5.5 V
特点: 消除爆音,差分输入,I²C,静音,短路和热保护,关机
安装类型: 表面贴装
供应商设备封装: 9-WLCSP(1.46x1.46)
封装/外壳: 9-WFBGA,CSPBGA
包装: 标准包装
其它名称: SSM2375CBZ-REEL7DKR
Filterless, High Efficiency,
Mono 3 W Class-D Audio Amplifier
Data Sheet
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevicesforitsuse,norforanyinfringementsofpatentsorother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
2010–2013 Analog Devices, Inc. All rights reserved.
FEATURES
Filterless Class-D amplifier with spread-spectrum
Σ-Δ modulation
3 W into 3 load and 1.4 W into 8 load at 5.0 V supply
with <1% total harmonic distortion (THD + N)
93% efficiency at 5.0 V, 1.4 W into 8 speaker
>100 dB signal-to-noise ratio (SNR)
High PSSR at 217 Hz: 80 dB
Flexible gain adjustment pin: 0 dB to 12 dB in 3 dB steps
Fixed input impedance: 80 k
User-selectable ultralow EMI emissions mode
Single-supply operation from 2.5 V to 5.5 V
20 nA shutdown current
Short-circuit and thermal protection with autorecovery
Available in 9-ball, 1.5 mm × 1.5 mm WLCSP
Pop-and-click suppression
APPLICATIONS
Mobile phones
MP3 players
Portable electronics
GENERAL DESCRIPTION
The SSM2375 is a fully integrated, high efficiency, Class-D audio
amplifier. It is designed to maximize performance for mobile
phone applications. The application circuit requires a minimum
of external components and operates from a single 2.5 V to 5.5 V
supply. It is capable of delivering 3 W of continuous output power
with <1% THD + N driving a 3 load from a 5.0 V supply.
The SSM2375 features a high efficiency, low noise modulation
scheme that requires no external LC output filters. The modulation
continues to provide high efficiency even at low output power.
The SSM2375 operates with 93% efficiency at 1.4 W into 8
or with 85% efficiency at 3 W into 3 from a 5.0 V supply and
has an SNR of >100 dB.
Spread-spectrum pulse density modulation (PDM) is used to
provide lower EMI-radiated emissions compared with other
Class-D architectures. The inherent randomized nature of
spread-spectrum PDM eliminates the clock intermodulation
(beating effect) of several amplifiers in close proximity.
The SSM2375 includes an optional modulation select pin
(ultralow EMI emissions mode) that significantly reduces the
radiated emissions at the Class-D outputs, particularly above
100 MHz. In ultralow EMI emissions mode, the SSM2375
can pass FCC Class B radiated emission testing with 50 cm,
unshielded speaker cable without any external filtering.
The device also includes a highly flexible gain select pin that
allows the user to select a gain of 0 dB, 3 dB, 6 dB, 9 dB, or
12 dB. The gain selection feature improves gain matching
between multiple SSM2375 devices within a single application
as compared to using external resistors to set the gain.
The SSM2375 has a micropower shutdown mode with a typical
shutdown current of 20 nA. Shutdown is enabled by applying
a logic low to the SD pin.
The device also includes pop-and-click suppression circuitry.
This suppression circuitry minimizes voltage glitches at the
output during turn-on and turn-off, reducing audible noise
on activation and deactivation.
Other features that simplify system-level integration of the
SSM2375 include input low-pass filtering to suppress out-of-band
DAC noise interference to the PDM modulator and fixed-input
impedance to simplify component selection across multiple
platform production builds.
The SSM2375 is specified over the industrial temperature range
of 40°C to +85°C. It has built-in thermal shutdown and output
short-circuit protection. It is available in a halide-free, 9-ball,
1.5 mm × 1.5 mm wafer level chip scale package (WLCSP).
FUNCTIONAL BLOCK DIAGRAM
FET
DRIVER
MODULATOR
(Σ-Δ)
0.1F
VDD
OUT+
OUT–
BIAS
EDGE
IN+
POWER SUPPLY
2.5V TO 5.5V
IN–
INTERNAL
OSCILLATOR
EDGE
CONTROL
GND
10F
22nF
RGAIN
SHUTDOWN
SD
GAIN SELECT
IN–
IN+
SSM2375
EMISSION
CONTROL
GAIN
CONTROL
GAIN
GAIN = 0dB, 3dB, 6dB, 9dB, OR 12dB
09011-
001
Figure 1.
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