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参数资料
| 型号： | SSR20C120CTM |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA |
| 封装： | TO-254, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 82K |
| 代理商： | SSR20C120CTM |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0049B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SSR20C __ __ __ __
│
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package
S = SMD1
M = TO-254
│
└ Configuration
CT = Centertap
└ Voltage
100 = 1000 V
120 = 1200 V
SSR20C Series
20 A / 1200 V
Schottky Silicon Carbide
Centertap Rectifier
FEATURES:
1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current 20 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over
Temperature
Small Package Size
TX, TXV, and Space Level Screening
Available. Consult Factory.
MAXIMUM RATINGS3/
Symbol
Value
Units
Peak Repetitive and Peak Reverse Voltage
SSR20C100CT
SSR20C120CT
VRRM
VR
1000
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Per Leg
Total
IO
10
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25
oC)
IFSM
120
Amps
Operating & Storage Temperature
TOP & Tstg
-55 to +250
oC
Junction Temperature
TJ
-55 to +250
oC
Maximum Thermal Resistance
(Junction to Case)
RθJC
1.0
oC/W
SMD1 (S)
TO-254 (M)
NOTES:
* Pulse Test: Pulse Width = 300
μsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C
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