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参数资料
| 型号： | SSR24C60CTS.5TV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 12 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | SSR24C60CTS.5TV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0020D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SSR24C 60 CT S.5 TX
│
└ Screening2/
__ = Not Screened
TV = TX Level
TXV = TXV Level
S = S Level
│
└ Package S.5 = SMD.5
G = Cerpack
│
└ Configuration
CT = Centertap
└ Voltage 50 = 500 V
60 = 600 V
SSR24C60CT Series
24 Amp
Schottky Silicon Carbide
Centertap Rectifier
600 Volts
Features:
World's Smallest Hermetic SiC Centertap Rectifier
High Voltage, 600V
Very High Operating Temperature, 250C
No Recovery Time (tfr or trr)
High Current Operation, 24A
Hermetically Sealed Packaging
TX, TXV, and S Level screening available
Maximum Ratings
3/
Symbol
Value
Units
Peak Repetitive and Peak Surge Reverse
Voltage
SSR24C50
SSR24C60
VRRM
VRSM
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Per Leg
Total
Io
12
24
Amps
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO, per leg)
IFSM
120
Amps
Power Dissipation
(TC = 25C)
PD
120
Watts
Operating & Storage Temperature 4/
Top & Tstg
-55 to +250
C
Maximum Thermal Resistance
Junction to Ambient
Junction to Case
RθJC
1.9
C/W
1
Cerpack (G)
SMD .5 (S.5)
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